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| GaAs MMICs GN01081B GaAs IC (with built-in ferroelectric) Driver amplifier for PCS unit: mm 10-0.2-0.05 +0.1 8-0.50.07 1 2 3 4 5 11 2-12 2.80.2 12-0~0.2 2~12 9 8 7 6 1.10.2 s Absolute Maximum Ratings (Ta = 25C) Parameter Power supply voltage Circuit current Max input power Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDD IDD Pin PD Topr Tstg Ratings 8 100 -5 450 -30 to +90 -40 to +120 Unit V mA dBm mW C C Part A 3.450.1 2.20.2 3.40.2 0.30.1 1: NC 7: VDD1 2: VDD2 8: NC 3: Source2 9: IN1 4: IN2 10: NC 5: NC 11: GND 6: NC 12: GND ESOF-10D Type Package s Electrical Characteristics (VDD = 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 3C) Parameter Circuit current Power gain Adjacent channel leakage power (ACP) 1 Adjacent channel leakage power (ACP) 2 Symbol Test method IDD PG ACP1 (1) (1) (1) (2) (1) (2) IS - 95 modulation, 1.25MHz Detuning 30kHz Bandwidth IS - 95 modulation, 2.25MHz Detuning 30kHz Bandwidth 22 Conditions min typ 60 25 -56 -71 max 75 27 -51 -66 Unit mA dB dBc ACP2 dBc Test method (1): Measurement circuit is shown in the following diagram. (2): This item is the sampling guaranteed item. s Measurement Circuit VDD1 5.6nH 20 2pF 5.6nH 100pF+1000pF 150 IN 2pF 10 9 8 7 6 12 11 1.5nH 1.5nH 12345 33pF OUT 33nH 100pF 10 1pF 100pF+47nF VDD2 10-0.150.05 2-0.550.1 2~12 Detail of Part A & B 4.00.2 q High output amplifier q Low distortion 10 2-12 s Features Part B 12 1 GaAs MMICs Pout, ACP Pin 20 15 10 1910MHz 1880MHz 1850MHz 0 -10 Pout -20 10 15 20 GN01081B Pout, IDD Pin 60 50 IDD 40 ACP (dBc) Pout (dBm) Pout (dBm) ACP 1.25MHz 0 -5 -10 ACP 2.25MHz -15 -20 -30 -70 -80 -25 -20 -15 -10 -5 0 -40 -50 -60 5 Pout 30 1910MHz 1880MHz 1850MHz 20 0 -5 IDD1 -10 -30 10 0 -25 -20 -15 -10 -5 0 Pin (dBm) Pin (dBm) 2 IDD (mA) 5 -30 IDD2 |
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